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| PartNumber | IRGP4266DPBF | IRGP4266D-EPBF |
| Description | IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT | IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT |
| Manufacturer | Infineon | Infineon |
| Product Category | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y |
| Technology | Si | Si |
| Package / Case | TO-247AC-3 | TO-247AD-3 |
| Mounting Style | Through Hole | Through Hole |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 650 V | 650 V |
| Collector Emitter Saturation Voltage | 1.7 V | 1.7 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V |
| Continuous Collector Current at 25 C | 140 A | 140 A |
| Pd Power Dissipation | 455 W | 455 W |
| Minimum Operating Temperature | - 40 C | - 40 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Packaging | Tube | Tube |
| Continuous Collector Current Ic Max | 140 A | 140 A |
| Brand | Infineon Technologies | Infineon / IR |
| Gate Emitter Leakage Current | 100 nA | 100 nA |
| Product Type | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 400 | 25 |
| Subcategory | IGBTs | IGBTs |
| Part # Aliases | SP001542370 | SP001540782 |
| Unit Weight | 0.191185 oz | 0.229281 oz |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRGP4266DPBF | IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT | |
| IRGP4266D-EPBF | IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT | ||
| IRGP4266DPBF | IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT | ||
Infineon / IR |
IRGP4266D-EPBF | IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT | |
| IRGP4266DPBF,IRGP4266D,G | 全新原裝 |