IRL3302S

IRL3302SPBF vs IRL3302STRL vs IRL3302S

 
PartNumberIRL3302SPBFIRL3302STRLIRL3302S
DescriptionMOSFET 20V 1 N-CH HEXFET 23mOhms 8.7nCMOSFET N-CH 20V 39A D2PAKMOSFET N-CH 20V 39A D2PAK
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current39 A--
Rds On Drain Source Resistance23 mOhms--
Vgs Gate Source Voltage10 V--
Qg Gate Charge20.7 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation57 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel--
TypePreliminary--
Width6.22 mm--
BrandInfineon / IR--
Fall Time89 ns--
Product TypeMOSFET--
Rise Time110 ns--
Factory Pack Quantity3200--
SubcategoryMOSFETs--
Typical Turn Off Delay Time41 ns--
Typical Turn On Delay Time7.2 ns--
Part # AliasesSP001552554--
Unit Weight0.139332 oz--
製造商 型號 描述 RFQ
Infineon / IR
Infineon / IR
IRL3302SPBF MOSFET 20V 1 N-CH HEXFET 23mOhms 8.7nC
Infineon Technologies
Infineon Technologies
IRL3302SPBF MOSFET N-CH 20V 39A D2PAK
IRL3302STRL MOSFET N-CH 20V 39A D2PAK
IRL3302STRR MOSFET N-CH 20V 39A D2PAK
IRL3302STRLPBF MOSFET N-CH 20V 39A D2PAK
IRL3302S MOSFET N-CH 20V 39A D2PAK
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