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| PartNumber | IRL530NSPBF | IRL530NSPBF,IRL530NS,L53 | IRL530NSPBFTTR |
| Description | Darlington Transistors MOSFET 100V 1 N-CH HEXFET 100mOhms 22.7nC | ||
| Manufacturer | IR | - | - |
| Product Category | FETs - Single | - | - |
| Packaging | Tube | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | TO-252-3 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 3.8 W | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 26 ns | - | - |
| Rise Time | 53 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 17 A | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Rds On Drain Source Resistance | 150 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 30 ns | - | - |
| Typical Turn On Delay Time | 7.2 ns | - | - |
| Qg Gate Charge | 22.7 nC | - | - |
| Forward Transconductance Min | 7.7 S | - | - |
| Channel Mode | Enhancement | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRL530NSPBF | Darlington Transistors MOSFET 100V 1 N-CH HEXFET 100mOhms 22.7nC | |
| IRL530NSPBF,IRL530NS,L53 | 全新原裝 | ||
| IRL530NSPBFTTR | 全新原裝 |