IRL637

IRL6372TRPBF vs IRL6372PBF vs IRL6372

 
PartNumberIRL6372TRPBFIRL6372PBFIRL6372
DescriptionMOSFET DUAL MOSFT 8.1A 2.5V 18mOhm drv cpblMOSFET 30V DUAL N-CH LO LOGIC LEVEL
ManufacturerInfineonInfineonInfineon Technologies
Product CategoryMOSFETMOSFETFETs - Arrays
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSO-8SO-8-
Number of Channels2 Channel2 Channel2 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current8.1 A8.1 A-
Rds On Drain Source Resistance17.9 mOhms17.9 mOhms-
Vgs Gate Source Voltage12 V12 V-
Qg Gate Charge11 nC11 nC-
Pd Power Dissipation2 W2 W-
ConfigurationDualDualDual
PackagingReelTubeTube Alternate Packaging
Height1.75 mm1.75 mm-
Length4.9 mm4.9 mm-
Transistor Type2 N-Channel2 N-Channel2 N-Channel
Width3.9 mm3.9 mm-
BrandInfineon / IRInfineon / IR-
Product TypeMOSFETMOSFET-
Factory Pack Quantity400095-
SubcategoryMOSFETsMOSFETs-
Part # AliasesSP001569038SP001568406-
Unit Weight0.019048 oz0.019048 oz0.019048 oz
Series--HEXFETR
Package Case--8-SOIC (0.154", 3.90mm Width)
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--8-SO
FET Type--2 N-Channel (Dual)
Power Max--2W
Drain to Source Voltage Vdss--30V
Input Capacitance Ciss Vds--1020pF @ 25V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--8.1A
Rds On Max Id Vgs--17.9 mOhm @ 8.1A, 4.5V
Vgs th Max Id--1.1V @ 10μA
Gate Charge Qg Vgs--11nC @ 4.5V
Pd Power Dissipation--2 W
Vgs Gate Source Voltage--12 V
Id Continuous Drain Current--8.1 A
Vds Drain Source Breakdown Voltage--30 V
Rds On Drain Source Resistance--17.9 mOhms
Qg Gate Charge--11 nC
製造商 型號 描述 RFQ
Infineon / IR
Infineon / IR
IRL6372TRPBF MOSFET DUAL MOSFT 8.1A 2.5V 18mOhm drv cpbl
IRL6372PBF MOSFET 30V DUAL N-CH LO LOGIC LEVEL
IRL6372 全新原裝
Infineon Technologies
Infineon Technologies
IRL6372PBF MOSFET 2N-CH 30V 8.1A 8SO
IRL6372TRPBF MOSFET 2N-CH 30V 8.1A 8SOIC
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