 |  | | |
| PartNumber | IRLR3110ZTRPBF | IRLR3110ZTRPBF. | IRLR3110ZTRPBF-CUT TAPE |
| Description | MOSFET 100V HEXFET 14mOhms 15nC | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 63 A | - | - |
| Rds On Drain Source Resistance | 12 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 16 V | - | - |
| Qg Gate Charge | 34 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 140 W | - | - |
| Configuration | Single | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon / IR | - | - |
| Forward Transconductance Min | 52 S | - | - |
| Fall Time | 48 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 110 ns | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 33 ns | - | - |
| Typical Turn On Delay Time | 24 ns | - | - |
| Part # Aliases | SP001574010 | - | - |
| Unit Weight | 0.014110 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon / IR |
IRLR3110ZTRPBF | MOSFET 100V HEXFET 14mOhms 15nC | |
Infineon Technologies |
IRLR3110ZTRPBF | MOSFET N-CH 100V 42A DPAK | |
| IRLR3110ZTRPBF. | 全新原裝 | ||
| IRLR3110ZTRPBF-CUT TAPE | 全新原裝 |