IS41C16100C

IS41C16100C-50KLI-TR vs IS41C16100C-50KLI vs IS41C16100C-50TI

 
PartNumberIS41C16100C-50KLI-TRIS41C16100C-50KLIIS41C16100C-50TI
DescriptionDRAM 16M, 5V, 50ns 1Mx16 EDO DRAM AsyncDRAM 16M, 5V, 50ns 1Mx16 EDO DRAM AsyncIC DRAM 16M PARALLEL 50TSOP II
ManufacturerISSIISSI-
Product CategoryDRAMMemory-
RoHSY--
TypeEDO DRAM--
Data Bus Width16 bit--
Organization1 M x 16--
Package / CaseSOJ-42--
Memory Size16 Mbit16M (1M x 16)-
Access Time50 ns--
Supply Voltage Max5.5 V--
Supply Voltage Min4.5 V--
Supply Current Max90 mA--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 85 C--
SeriesIS41C16100C--
PackagingReelTube Alternate Packaging-
BrandISSI--
Mounting StyleSMD/SMT--
Moisture SensitiveYes--
Operating Supply Voltage5 V--
Product TypeDRAM--
Factory Pack Quantity1000--
SubcategoryMemory & Data Storage--
Package Case-42-BSOJ (0.400", 10.16mm)-
Operating Temperature--40°C ~ 85°C (TA)-
Interface-Parallel-
Voltage Supply-4.5 V ~ 5.5 V-
Supplier Device Package-42-SOJ-
Memory Type-DRAM - EDO-
Speed-50ns-
Format Memory-RAM-
製造商 型號 描述 RFQ
ISSI
ISSI
IS41C16100C-50KLI-TR DRAM 16M, 5V, 50ns 1Mx16 EDO DRAM Async
IS41C16100C-50KLI-TR DRAM 16M, 5V, 50ns 1Mx16 EDO DRAM Async
IS41C16100C-50TLI-TR DRAM 16M, 5V, 50ns 1Mx16 EDO DRAM Async
IS41C16100C-50KLI DRAM 16M, 5V, 50ns 1Mx16 EDO DRAM Async
IS41C16100C-50TLI DRAM 16M, 5V, 50ns 1Mx16 EDO DRAM Async
IS41C16100C-50TI IC DRAM 16M PARALLEL 50TSOP II
IS41C16100C-50TI-TR IC DRAM 16M PARALLEL 50TSOP II
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