IS49NLS18160-33B

IS49NLS18160-33B vs IS49NLS18160-33BI vs IS49NLS18160-33BL

 
PartNumberIS49NLS18160-33BIS49NLS18160-33BIIS49NLS18160-33BL
DescriptionDRAM 288Mbit x18 Separate I/O 300MHz LeadedDRAM 288Mbit x18 Separate I/O 300MHz Leaded ITDRAM 288Mbit x18 Separate I/O 300MHz RLDRAM2
ManufacturerISSIISSIISSI
Product CategoryDRAMDRAMDRAM
RoHSNNY
TypeRLDRAM2RLDRAM2RLDRAM2
Data Bus Width18 bit18 bit18 bit
Organization16 M x 1816 M x 1816 M x 18
Package / CaseBGA-144BGA-144BGA-144
Memory Size288 Mbit288 Mbit288 Mbit
Maximum Clock Frequency300 MHz300 MHz300 MHz
Access Time3.3 ns3.3 ns3.3 ns
Supply Voltage Max1.9 V1.9 V2.63 V
Supply Voltage Min1.7 V1.7 V2.38 V
Supply Current Max368 mA368 mA368 mA
Minimum Operating Temperature0 C- 40 C0 C
Maximum Operating Temperature+ 70 C+ 85 C+ 70 C
SeriesIS49NLS18160IS49NLS18160IS49NLS18160
PackagingTrayTrayTray
BrandISSIISSIISSI
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Moisture SensitiveYesYesYes
Operating Supply Voltage1.8 V1.8 V1.8 V
Product TypeDRAMDRAMDRAM
Factory Pack Quantity104104104
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
TradenameRLDRAM2RLDRAM2RLDRAM2
Unit Weight0.015757 oz0.015757 oz0.015757 oz
製造商 型號 描述 RFQ
ISSI
ISSI
IS49NLS18160-33BLI DRAM 288Mbit x18 Separate I/O 300MHz RLDRAM2
IS49NLS18160-33B DRAM 288Mbit x18 Separate I/O 300MHz Leaded
IS49NLS18160-33BI DRAM 288Mbit x18 Separate I/O 300MHz Leaded IT
IS49NLS18160-33BL DRAM 288Mbit x18 Separate I/O 300MHz RLDRAM2
IS49NLS18160-33BI DRAM 288Mbit x18 Separate I/O 300MHz Leaded IT
IS49NLS18160-33B DRAM 288Mbit x18 Separate I/O 300MHz Leaded
IS49NLS18160-33BLI DRAM 288Mbit x18 Separate I/O 300MHz RLDRAM2
IS49NLS18160-33BL DRAM 288Mbit x18 Separate I/O 300MHz RLDRAM2
Top