IS66WVC4M16A

IS66WVC4M16ALL-7010BLI vs IS66WVC4M16ALL-7010BLI- vs IS66WVC4M16ALL-7010BLI-T

 
PartNumberIS66WVC4M16ALL-7010BLIIS66WVC4M16ALL-7010BLI-IS66WVC4M16ALL-7010BLI-T
DescriptionSRAM 64Mb 1.54M x 16 70ns Pseudo SRAM
ManufacturerISSIISSI, Integrated Silicon Solution IncISSI, Integrated Silicon Solution Inc
Product CategorySRAMMemoryMemory
RoHSY--
Memory Size64 Mbit64M (4M x 16)64M (4M x 16)
Organization4 M x 164 M x 164 M x 16
Access Time70 ns70 ns70 ns
Supply Voltage Max1.95 V--
Supply Voltage Min1.7 V--
Supply Current Max25 mA--
Minimum Operating Temperature- 40 C- 40 C- 40 C
Maximum Operating Temperature+ 85 C+ 85 C+ 85 C
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseBGA-54--
PackagingTrayTape & Reel (TR) Alternate PackagingTape & Reel (TR) Alternate Packaging
Memory TypePsuedoPSRAM (Pseudo)PSRAM (Pseudo)
SeriesIS66WVC4M16ALLIS66WVC4M16ALLIS66WVC4M16ALL
BrandISSI--
Moisture SensitiveYes--
Product TypeSRAM--
Factory Pack Quantity480--
SubcategoryMemory & Data Storage--
Unit Weight0.003517 oz0.003517 oz0.003517 oz
Package Case-BGA-54BGA-54
Operating Temperature--40°C ~ 85°C (TA)-40°C ~ 85°C (TA)
Interface-ParallelParallel
Voltage Supply-1.7 V ~ 1.95 V1.7 V ~ 1.95 V
Supplier Device Package-54-VFBGA (6x8)54-VFBGA (6x8)
Speed-70ns70ns
Format Memory-RAMRAM
Supply Current Max-25 mA25 mA
Supply Voltage Max-1.95 V1.95 V
Supply Voltage Min-1.7 V1.7 V
製造商 型號 描述 RFQ
ISSI
ISSI
IS66WVC4M16ALL-7010BLI-TR SRAM 64Mb 1.54M x 16 70ns Pseudo SRAM
IS66WVC4M16ALL-7010BLI SRAM 64Mb 1.54M x 16 70ns Pseudo SRAM
IS66WVC4M16ALL-7010BLI SRAM 64Mb 1.54M x 16 70ns Pseudo SRAM
IS66WVC4M16ALL-7010BLI- 全新原裝
IS66WVC4M16ALL-7010BLI-T 全新原裝
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