IXFE48N50

IXFE48N50Q vs IXFE48N50 vs IXFE48N50QD2

 
PartNumberIXFE48N50QIXFE48N50IXFE48N50QD2
DescriptionMOSFET 41 Amps 500V 0.11 RdsMOSFET 41 Amps 500V 0.11 Rds
ManufacturerIXYS-IXYS
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleChassis Mount-SMD/SMT
Package / CaseISOPLUS-227-4--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current41 A--
Rds On Drain Source Resistance110 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 40 C-- 40 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation400 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameHyperFET--
PackagingTube-Tube
Height9.65 mm--
Length38.23 mm--
SeriesIXFE48N50Q-IXFE48N50QD2
Transistor Type1 N-Channel-1 N-Channel
Width25.42 mm--
BrandIXYS--
Fall Time10 ns-10 ns
Product TypeMOSFET--
Rise Time22 ns-22 ns
Factory Pack Quantity10--
SubcategoryMOSFETs--
Typical Turn Off Delay Time75 ns-75 ns
Typical Turn On Delay Time33 ns-33 ns
Package Case--ISOPLUS-227-4
Pd Power Dissipation--400 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--41 A
Vds Drain Source Breakdown Voltage--500 V
Rds On Drain Source Resistance--110 mOhms
製造商 型號 描述 RFQ
Littelfuse
Littelfuse
IXFE48N50Q MOSFET 41 Amps 500V 0.11 Rds
IXFE48N50Q MOSFET 41 Amps 500V 0.11 Rds
IXFE48N50 全新原裝
IXFE48N50QD3 MOSFET 41 Amps 500V 110 Rds
IXFE48N50QD2 MOSFET 41 Amps 500V 0.11 Rds
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