 | |  | |
| PartNumber | IXFH12N120P | IXFH12N120 | IXFH12N120D |
| Description | MOSFET 12 Amps 1200V 1.15 Rds | MOSFET 12 Amps 1200V 1.3 Rds | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | TO-247-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 1.2 kV | 1.2 kV | - |
| Id Continuous Drain Current | 12 A | 12 A | - |
| Rds On Drain Source Resistance | 1.35 Ohms | 1.4 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 6.5 V | - | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 103 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 543 W | 500 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | HiPerFET | HyperFET | - |
| Packaging | Tube | Tube | - |
| Height | 21.46 mm | 21.46 mm | - |
| Length | 16.26 mm | 16.26 mm | - |
| Series | IXFH12N120 | IXFH12N120 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | Polar Power MOSFET HiPerFET | - | - |
| Width | 5.3 mm | 5.3 mm | - |
| Brand | IXYS | IXYS | - |
| Forward Transconductance Min | 5 S | - | - |
| Fall Time | 34 ns | 17 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 25 ns | 25 ns | - |
| Factory Pack Quantity | 30 | 30 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 62 ns | 35 ns | - |
| Typical Turn On Delay Time | 34 ns | 24 ns | - |
| Unit Weight | 0.229281 oz | 0.229281 oz | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Littelfuse |
IXFH12N120P | MOSFET 12 Amps 1200V 1.15 Rds | |
| IXFH12N120 | MOSFET 12 Amps 1200V 1.3 Rds | ||
| IXFH12N120D | 全新原裝 | ||
| IXFH12N120P | MOSFET N-CH 1200V 12A TO-247 | ||
| IXFH12N120 | MOSFET 12 Amps 1200V 1.3 Rds |