IXFH15N1

IXFH15N100P vs IXFH15N100 vs IXFH15N100Q

 
PartNumberIXFH15N100PIXFH15N100IXFH15N100Q
DescriptionMOSFET 15 Amps 1000V 0.76 RdsMOSFET 15 Amps 1000V 0.7 RdsMOSFET 15 Amps 1000V 0.725 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3--
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage1 kV--
Id Continuous Drain Current15 A--
Rds On Drain Source Resistance760 mOhms--
Vgs th Gate Source Threshold Voltage6.5 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge97 nC--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation543 W--
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameHiPerFETHyperFETHyperFET
PackagingTubeTubeTube
Height21.46 mm--
Length16.26 mm--
SeriesIXFH15N100PIXFH15N100IXFH15N100
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypePolar Power MOSFET HiPerFET--
Width5.3 mm--
BrandIXYS--
Forward Transconductance Min6.5 S--
Fall Time58 ns30 ns14 ns
Product TypeMOSFET--
Rise Time44 ns30 ns27 ns
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time44 ns120 ns67 ns
Typical Turn On Delay Time41 ns27 ns28 ns
Unit Weight0.229281 oz0.229281 oz0.229281 oz
Package Case-TO-247-3TO-247-3
Pd Power Dissipation-360 W360 W
Vgs Gate Source Voltage-20 V20 V
Id Continuous Drain Current-15 A15 A
Vds Drain Source Breakdown Voltage-1000 V1000 V
Rds On Drain Source Resistance-700 mOhms700 mOhms
製造商 型號 描述 RFQ
Littelfuse
Littelfuse
IXFH15N100Q3 MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/15A
IXFH15N100P MOSFET 15 Amps 1000V 0.76 Rds
IXFH15N100Q-IXYS 全新原裝
IXFH15N100Q3 MOSFET N-CH 1000V 15A TO-247
IXFH15N100P Darlington Transistors MOSFET 15 Amps 1000V 0.76 Rds
IXFH15N100 MOSFET 15 Amps 1000V 0.7 Rds
IXFH15N100Q MOSFET 15 Amps 1000V 0.725 Rds
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