PartNumber | IXFH15N100Q3 | IXFH15N100Q-IXYS | IXFH15N100Q |
Description | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/15A | MOSFET 15 Amps 1000V 0.725 Rds | |
Manufacturer | IXYS | IXYS | |
Product Category | MOSFET | IC Chips | FETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | Through Hole | - | Through Hole |
Package / Case | TO-247-3 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 1 kV | - | - |
Id Continuous Drain Current | 15 A | - | - |
Rds On Drain Source Resistance | 1.05 Ohms | - | - |
Vgs Gate Source Voltage | 30 V | - | - |
Qg Gate Charge | 64 nC | - | - |
Pd Power Dissipation | 690 W | - | - |
Configuration | Single | - | Single |
Tradename | HiPerFET | - | HyperFET |
Packaging | Tube | - | Tube |
Series | IXFH15N100 | - | IXFH15N100 |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Brand | IXYS | - | - |
Product Type | MOSFET | - | - |
Rise Time | 250 ns | - | 27 ns |
Factory Pack Quantity | 30 | - | - |
Subcategory | MOSFETs | - | - |
Unit Weight | 0.056438 oz | - | 0.229281 oz |
Package Case | - | - | TO-247-3 |
Pd Power Dissipation | - | - | 360 W |
Maximum Operating Temperature | - | - | + 150 C |
Minimum Operating Temperature | - | - | - 55 C |
Fall Time | - | - | 14 ns |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 15 A |
Vds Drain Source Breakdown Voltage | - | - | 1000 V |
Rds On Drain Source Resistance | - | - | 700 mOhms |
Typical Turn Off Delay Time | - | - | 67 ns |
Typical Turn On Delay Time | - | - | 28 ns |
Channel Mode | - | - | Enhancement |