IXFH26N6

IXFH26N60P vs IXFH26N60 vs IXFH26N60Q

 
PartNumberIXFH26N60PIXFH26N60IXFH26N60Q
DescriptionMOSFET 600V 26AMOSFET 600V 26A
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETFETs - SingleIC Chips
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-247-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current26 A--
Rds On Drain Source Resistance270 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation460 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameHiPerFET-HyperFET
PackagingTube-Tube
Height21.46 mm--
Length16.26 mm--
SeriesIXFH26N60-IXFH26N60
Transistor Type1 N-Channel-1 N-Channel
Width5.3 mm--
BrandIXYS--
Forward Transconductance Min26 S--
Fall Time21 ns-16 ns
Product TypeMOSFET--
Rise Time27 ns-32 ns
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time75 ns-80 ns
Typical Turn On Delay Time25 ns-30 ns
Unit Weight0.229281 oz-0.229281 oz
Package Case--TO-247-3
Pd Power Dissipation--360 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--26 A
Vds Drain Source Breakdown Voltage--600 V
Rds On Drain Source Resistance--250 mOhms
Forward Transconductance Min--22 S
製造商 型號 描述 RFQ
Littelfuse
Littelfuse
IXFH26N60P MOSFET 600V 26A
IXFH26N60 全新原裝
IXFH26N60Q 13+ 全新原裝
IXFH26N60P Darlington Transistors MOSFET 600V 26A
IXFH26N60Q MOSFET 600V 26A
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