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| PartNumber | IXFH4N100Q | IXFH4N100 | IXFH4N100Q2 |
| Description | MOSFET 4 Amps 1000V 2.8 Rds | ||
| Manufacturer | IXYS | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 1 kV | - | - |
| Id Continuous Drain Current | 4 A | - | - |
| Rds On Drain Source Resistance | 3 Ohms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 150 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | HyperFET | - | - |
| Packaging | Tube | - | - |
| Height | 21.46 mm | - | - |
| Length | 16.26 mm | - | - |
| Series | IXFH4N100 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.3 mm | - | - |
| Brand | IXYS | - | - |
| Fall Time | 18 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 15 ns | - | - |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 32 ns | - | - |
| Typical Turn On Delay Time | 17 ns | - | - |
| Unit Weight | 0.229281 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Littelfuse |
IXFH4N100Q | MOSFET 4 Amps 1000V 2.8 Rds | |
| IXFH4N100 | 全新原裝 | ||
| IXFH4N100Q2 | 全新原裝 | ||
| IXFH4N100QZ | 全新原裝 | ||
| IXFH4N100Q | MOSFET 4 Amps 1000V 2.8 Rds |