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| PartNumber | IXFK20N120P | IXFK20N120 | IXFK20N60 |
| Description | MOSFET 20 Amps 1200V 1 Rds | MOSFET 20 Amps 1200 V 0.75 Ohms Rds | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-264-3 | TO-264-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 1.2 kV | 1.2 kV | - |
| Id Continuous Drain Current | 20 A | 20 A | - |
| Rds On Drain Source Resistance | 570 mOhms | 750 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 6.5 V | - | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 193 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 780 W | 780 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | HiPerFET | HyperFET | - |
| Packaging | Tube | Tube | - |
| Height | 26.16 mm | 26.16 mm | - |
| Length | 19.96 mm | 19.96 mm | - |
| Series | IXFK20N120 | IXFK20N120 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | Polar Power MOSFET HiPerFET | - | - |
| Width | 5.13 mm | 5.13 mm | - |
| Brand | IXYS | IXYS | - |
| Forward Transconductance Min | 10 S | - | - |
| Fall Time | 70 ns | 20 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 45 ns | 45 ns | - |
| Factory Pack Quantity | 25 | 25 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 72 ns | 75 ns | - |
| Typical Turn On Delay Time | 49 ns | 25 ns | - |
| Unit Weight | 0.352740 oz | 0.352740 oz | - |