IXFN23 stock, IXFN23, IXFN230N20T


PartNumber	IXFN230N20T	IXFN230N10	IXFN23N100
Description	MOSFET 230A 200V	MOSFET 230 Amps 100V 0.006 Rds	MOSFET 23 Amps 1000V 0.43 Rds
Manufacturer	IXYS	IXYS	IXYS
Product Category	MOSFET	MOSFET	MOSFET
RoHS	Y	Y	Y
Technology	Si	Si	Si
Mounting Style	Chassis Mount	Chassis Mount	Chassis Mount
Package / Case	SOT-227-4	SOT-227-4	SOT-227-4
Number of Channels	1 Channel	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	200 V	100 V	1 kV
Id Continuous Drain Current	220 A	230 A	24 A
Rds On Drain Source Resistance	7.5 mOhms	6.5 mOhms	390 mOhms
Vgs th Gate Source Threshold Voltage	3 V	-	-
Vgs Gate Source Voltage	10 V	20 V	20 V
Qg Gate Charge	358 nC	-	-
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 175 C	+ 150 C	+ 150 C
Pd Power Dissipation	1090 W	700 W	568 W
Configuration	Single	Single	Single
Channel Mode	Enhancement	Enhancement	Enhancement
Tradename	HiPerFET	HyperFET	HyperFET
Packaging	Tube	Tube	Tube
Height	12.22 mm	9.6 mm	9.6 mm
Length	38.23 mm	38.23 mm	38.2 mm
Series	IXFN230N20	IXFN230N10	IXFN23N100
Transistor Type	1 N-Channel	1 N-Channel	1 N-Channel
Type	GigaMOS Power MOSFET	-	-
Width	25.42 mm	25.42 mm	25.07 mm
Brand	IXYS	IXYS	IXYS
Forward Transconductance Min	90 S	-	-
Fall Time	17 ns	60 ns	21 ns
Product Type	MOSFET	MOSFET	MOSFET
Rise Time	38 ns	150 ns	35 ns
Factory Pack Quantity	10	10	10
Subcategory	MOSFETs	MOSFETs	MOSFETs
Typical Turn Off Delay Time	62 ns	112 ns	75 ns
Typical Turn On Delay Time	58 ns	40 ns	35 ns
Unit Weight	1.058219 oz	1.058219 oz	1.058219 oz

Search Part Number : "IXFN23", Match & Start with "IXFN23" - Total : 6

IXFN23