| PartNumber | IXFR32N100Q3 | IXFR32N80P | IXFR32N100P |
| Description | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/23A | MOSFET 20 Amps 800V 0.29 Rds | MOSFET 32 Amps 1000V |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 1 kV | 800 V | 1 kV |
| Id Continuous Drain Current | 23 A | 20 A | 18 A |
| Rds On Drain Source Resistance | 350 mOhms | 290 mOhms | 340 mOhms |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 195 nC | 150 nC | - |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 570 W | 300 W | 320 W |
| Configuration | Single | Single | Single |
| Tradename | HiPerFET | HiPerFET | HiPerFET |
| Packaging | Tube | Tube | Tube |
| Series | IXFR32N100 | IXFR32N80 | IXFR32N100 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | IXYS | IXYS | IXYS |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 300 ns | 24 ns | 55 ns |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.056438 oz | 0.056438 oz | 0.056438 oz |
| Vgs th Gate Source Threshold Voltage | - | 5 V | - |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Channel Mode | - | Enhancement | Enhancement |
| Height | - | 21.34 mm | 21.34 mm |
| Length | - | 16.13 mm | 16.13 mm |
| Type | - | PolarHV HiPerFET Power MOSFET | - |
| Width | - | 5.21 mm | 5.21 mm |
| Forward Transconductance Min | - | 23 S | - |
| Fall Time | - | 24 ns | 43 ns |
| Typical Turn Off Delay Time | - | 85 ns | 76 ns |
| Typical Turn On Delay Time | - | 30 ns | 50 ns |