IXFX64N5

IXFX64N50P vs IXFX64N50Q3 vs IXFX64N50

 
PartNumberIXFX64N50PIXFX64N50Q3IXFX64N50
DescriptionMOSFET 64.0 Amps 500 V 0.09 Ohm RdsMOSFET Q3Class HiPerFET Pwr MOSFET 500V/64A
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CasePLUS247-3TO-247-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage500 V500 V-
Id Continuous Drain Current64 A64 A-
Rds On Drain Source Resistance85 mOhms85 mOhms-
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage10 V30 V-
Qg Gate Charge150 nC145 nC-
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation830 W1 kW-
ConfigurationSingleSingleSingle
Channel ModeEnhancement-Enhancement
TradenameHiPerFETHiPerFETPolarHV HiPerFET
PackagingTubeTubeTube
Height21.34 mm--
Length16.13 mm--
SeriesIXFX64N50IXFX64N50HiPerFET, PolarHT
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypePolarHV HiPerFET Power MOSFET--
Width5.21 mm--
BrandIXYSIXYS-
Forward Transconductance Min30 S--
Fall Time22 ns-22 ns
Product TypeMOSFETMOSFET-
Rise Time25 ns250 ns25 ns
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time85 ns-85 ns
Typical Turn On Delay Time30 ns-30 ns
Unit Weight0.056438 oz0.056438 oz0.056438 oz
Package Case--TO-247-3
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Through Hole
Supplier Device Package--PLUS247-3
FET Type--MOSFET N-Channel, Metal Oxide
Power Max--830W
Drain to Source Voltage Vdss--500V
Input Capacitance Ciss Vds--8700pF @ 25V
FET Feature--Standard
Current Continuous Drain Id 25°C--64A (Tc)
Rds On Max Id Vgs--85 mOhm @ 32A, 10V
Vgs th Max Id--5.5V @ 8mA
Gate Charge Qg Vgs--150nC @ 10V
Pd Power Dissipation--830 W
Vgs Gate Source Voltage--30 V
Id Continuous Drain Current--64 A
Vds Drain Source Breakdown Voltage--500 V
Vgs th Gate Source Threshold Voltage--5.5 V
Rds On Drain Source Resistance--85 mOhms
Qg Gate Charge--150 nC
Forward Transconductance Min--30 S
製造商 型號 描述 RFQ
Littelfuse
Littelfuse
IXFX64N50P MOSFET 64.0 Amps 500 V 0.09 Ohm Rds
IXFX64N50Q3 MOSFET Q3Class HiPerFET Pwr MOSFET 500V/64A
IXFX64N50 全新原裝
IXFX64N50P MOSFET N-CH 500V 64A PLUS247
IXFX64N50Q3 MOSFET Q3Class HiPerFET Pwr MOSFET 500V/64A
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