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| PartNumber | IXGT32N170 | IXGT32N170 T | IXGT32N170 TRL |
| Description | IGBT Transistors 72 Amps 1700 V 3.3 V Rds | ||
| Manufacturer | IXYS | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-268-3 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 1.7 kV | - | - |
| Collector Emitter Saturation Voltage | 2.5 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 75 A | - | - |
| Pd Power Dissipation | 350 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | IXGT32N170 | - | - |
| Packaging | Tube | - | - |
| Continuous Collector Current Ic Max | 200 A | - | - |
| Height | 5.1 mm | - | - |
| Length | 16.05 mm | - | - |
| Operating Temperature Range | - 55 C to + 150 C | - | - |
| Width | 14 mm | - | - |
| Brand | IXYS | - | - |
| Continuous Collector Current | 75 A | - | - |
| Gate Emitter Leakage Current | 100 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | IGBTs | - | - |
| Unit Weight | 0.158733 oz | - | - |