| PartNumber | IXTH30N25L2 | IXTH30N25 | IXTH30N50 |
| Description | Discrete Semiconductor Modules Disc Mosfet N-CH Linear L2 TO-247AD | MOSFET 30 Amps 250V 0.075 Rds | MOSFET 30 Amps 500V 0.17 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | Discrete Semiconductor Modules | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Product | Power MOSFET Modules | - | - |
| Type | Linear L2 | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Packaging | Tube | Tube | Tube |
| Configuration | Single | Single | Single |
| Brand | IXYS | IXYS | IXYS |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Fall Time | 23 ns | 17 ns | 26 ns |
| Id Continuous Drain Current | 30 A | 30 A | 30 A |
| Pd Power Dissipation | 355 W | 200 W | 360 W |
| Product Type | Discrete Semiconductor Modules | MOSFET | MOSFET |
| Rds On Drain Source Resistance | 140 mOhms | 75 mOhms | 170 mOhms |
| Rise Time | 78 ns | 19 ns | 42 ns |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | Discrete Semiconductor Modules | MOSFETs | MOSFETs |
| Tradename | Linear L2 | - | - |
| Typical Turn Off Delay Time | 65 ns | 79 ns | 110 ns |
| Typical Turn On Delay Time | 22 ns | 19 ns | 35 ns |
| Vds Drain Source Breakdown Voltage | 250 V | 250 V | 500 V |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Technology | - | Si | Si |
| Number of Channels | - | 1 Channel | 1 Channel |
| Channel Mode | - | Enhancement | Enhancement |
| Height | - | 21.46 mm | 21.46 mm |
| Length | - | 16.26 mm | 16.26 mm |
| Series | - | IXTH30N25 | IXTH30N50 |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Width | - | 5.3 mm | 5.3 mm |
| Unit Weight | - | 0.229281 oz | 0.229281 oz |