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| PartNumber | IXTP120P065T | IXTP120N04T2 | IXTP120N075T2 |
| Description | MOSFET -120 Amps -65V 0.01 Rds | MOSFET 120 Amps 40V | IGBT Transistors MOSFET 120 Amps 75V |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 65 V | 40 V | - |
| Id Continuous Drain Current | 120 A | 120 A | - |
| Rds On Drain Source Resistance | 10 mOhms | 6.1 mOhms | - |
| Vgs Gate Source Voltage | 15 V | 20 V | - |
| Qg Gate Charge | 185 nC | 58 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 175 C | + 175 C |
| Pd Power Dissipation | 298 W | 200 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Tube | Tube |
| Series | IXTP120P065 | IXTP120N04 | IXTP120N075 |
| Transistor Type | 1 P-Channel | 1 N-Channel | - |
| Brand | IXYS | IXYS | - |
| Fall Time | 21 ns | 11 ns | 18 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 28 ns | 8 ns | 33 ns |
| Factory Pack Quantity | 50 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 38 ns | 16 ns | 21 ns |
| Typical Turn On Delay Time | 31 ns | 14 ns | 13 ns |
| Unit Weight | 0.081130 oz | 0.081130 oz | 0.081130 oz |
| Vgs th Gate Source Threshold Voltage | - | 4 V | - |
| Tradename | - | HiPerFET | TrenchT2 |
| Height | - | 16 mm | - |
| Length | - | 10.66 mm | - |
| Type | - | TrenchT2 Power MOSFET | - |
| Width | - | 4.83 mm | - |
| Forward Transconductance Min | - | 28 S | - |
| Package Case | - | - | TO-220-3 |
| Pd Power Dissipation | - | - | 250 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 120 A |
| Vds Drain Source Breakdown Voltage | - | - | 75 V |
| Vgs th Gate Source Threshold Voltage | - | - | 4 V |
| Rds On Drain Source Resistance | - | - | 7.7 mOhms |
| Qg Gate Charge | - | - | 78 nC |
| Forward Transconductance Min | - | - | 38 S |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Littelfuse |
IXTP120P065T | MOSFET -120 Amps -65V 0.01 Rds | |
| IXTP120N04T2 | MOSFET 120 Amps 40V | ||
| IXTP120P065T , MMBD1703A | 全新原裝 | ||
| IXTP120P065T | IGBT Transistors MOSFET -120 Amps -65V 0.01 Rds | ||
| IXTP120N075T2 | IGBT Transistors MOSFET 120 Amps 75V | ||
| IXTP120N04T2 | MOSFET 120 Amps 40V |