| PartNumber | IXTP20N65X2 | IXTP20N65X2M | IXTP20N65X |
| Description | Discrete Semiconductor Modules DiscMSFT NChUltraJnctX2Class TO-220AB/FP | Discrete Semiconductor Modules DiscMSFT NChUltraJnctX2Class TO-220AB/FP | MOSFET 650V/9A Power MOSFET |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | Discrete Semiconductor Modules | Discrete Semiconductor Modules | MOSFET |
| RoHS | Y | Y | Y |
| Product | Power MOSFET Modules | Power MOSFET Modules | - |
| Type | X2-Class | X2-Class | - |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Packaging | Tube | Tube | Tube |
| Configuration | Single | Single | Single |
| Brand | IXYS | IXYS | IXYS |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Fall Time | 20 ns | 20 ns | 22 ns |
| Id Continuous Drain Current | 20 A | 20 A | 20 A |
| Pd Power Dissipation | 290 W | 290 W | 320 W |
| Product Type | Discrete Semiconductor Modules | Discrete Semiconductor Modules | MOSFET |
| Rds On Drain Source Resistance | 185 mOhms | 185 mOhms | 210 mOhms |
| Rise Time | 27 ns | 27 ns | 30 ns |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | Discrete Semiconductor Modules | Discrete Semiconductor Modules | MOSFETs |
| Tradename | HiPerFET | HiPerFET | HiPerFET |
| Typical Turn Off Delay Time | 47 ns | 47 ns | 46 ns |
| Typical Turn On Delay Time | 19 ns | 19 ns | 18 ns |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | 650 V |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V | 3 V |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Qg Gate Charge | - | - | 35 nC |
| Channel Mode | - | - | Enhancement |
| Series | - | - | X-Class |
| Forward Transconductance Min | - | - | 9 S |
| Unit Weight | - | - | 0.012346 oz |