IXTP48

IXTP48N20TM vs IXTP48N20T vs IXTP48P05T

 
PartNumberIXTP48N20TMIXTP48N20TIXTP48P05T
DescriptionDiscrete Semiconductor Modules DiscMSFT NChTrenchGate-Gen1 TO-220AB/FPMOSFET 48 Amps 200V 50 RdsMOSFET TenchP Power MOSFET
ManufacturerIXYSIXYSIXYS
Product CategoryDiscrete Semiconductor ModulesMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
ProductPower MOSFET Modules--
TypeTrench--
Vgs Gate Source Voltage20 V30 V-
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220AB-3TO-220-3-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
PackagingTubeTubeTube
ConfigurationSingleSingle-
BrandIXYSIXYS-
Transistor PolarityN-ChannelN-ChannelP-Channel
Fall Time28 ns28 ns-
Id Continuous Drain Current48 A48 A-
Pd Power Dissipation250 W250 W-
Product TypeDiscrete Semiconductor ModulesMOSFET-
Rds On Drain Source Resistance50 mOhms50 mOhms-
Rise Time26 ns26 ns-
Factory Pack Quantity5050-
SubcategoryDiscrete Semiconductor ModulesMOSFETs-
TradenameTrenchHiPerFET-
Typical Turn Off Delay Time46 ns46 ns-
Typical Turn On Delay Time20 ns20 ns-
Vds Drain Source Breakdown Voltage200 V200 V-
Vgs th Gate Source Threshold Voltage2.5 V--
Technology-SiSi
Number of Channels-1 Channel1 Channel
Channel Mode-Enhancement-
Height-9.15 mm-
Length-10.66 mm-
Series-IXTP48N20IXTP48P05
Transistor Type-1 N-Channel1 P-Channel
Width-4.83 mm-
Unit Weight-0.081130 oz0.012346 oz
Package Case--TO-220-3
Id Continuous Drain Current--- 48 A
Vds Drain Source Breakdown Voltage--- 50 V
Rds On Drain Source Resistance--30 mOhms
製造商 型號 描述 RFQ
Littelfuse
Littelfuse
IXTP48N20TM Discrete Semiconductor Modules DiscMSFT NChTrenchGate-Gen1 TO-220AB/FP
IXTP48N20T MOSFET 48 Amps 200V 50 Rds
IXTP48N20T MOSFET N-CH 200V 48A TO-220
IXTP48P05T MOSFET TenchP Power MOSFET
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