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| PartNumber | IXTP4N65X2 | IXTP4N60A | IXTP4N60P |
| Description | MOSFET DISCMSFT NCHULTRAJNCTX2CLASS | MOSFET 4.0 Amps 600 V 1.9 Ohm Rds | |
| Manufacturer | IXYS | - | IXYS |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-220-3 | - | - |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Id Continuous Drain Current | 4 A | - | - |
| Rds On Drain Source Resistance | 850 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 8.3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 80 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | HiPerFET | - | PolarHV |
| Packaging | Tube | - | Tube |
| Series | X2-Class | - | IXTP4N60 |
| Brand | IXYS | - | - |
| Forward Transconductance Min | 2.5 S | - | - |
| Fall Time | 25 ns | - | 20 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 28 ns | - | 10 ns |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 57 ns | - | 50 ns |
| Typical Turn On Delay Time | 22 ns | - | 25 ns |
| Unit Weight | 0.012346 oz | - | 0.081130 oz |
| Package Case | - | - | TO-220-3 |
| Number of Channels | - | - | 1 Channel |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 89 W |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 4 A |
| Vds Drain Source Breakdown Voltage | - | - | 600 V |
| Vgs th Gate Source Threshold Voltage | - | - | 5.5 V |
| Rds On Drain Source Resistance | - | - | 2 Ohms |
| Qg Gate Charge | - | - | 13 nC |
| Forward Transconductance Min | - | - | 2.8 S |