IXTQ26N stock, IXTQ26N, IXTQ26N50P


PartNumber	IXTQ26N50P	IXTQ26N60P	IXTQ26N50PS
Description	MOSFET 26.0 Amps 500 V 0.23 Ohm Rds	MOSFET 26.0 Amps 600 V 0.27 Ohm Rds
Manufacturer	IXYS	IXYS	-
Product Category	MOSFET	MOSFET	-
RoHS	Y	Y	-
Technology	Si	Si	-
Mounting Style	Through Hole	Through Hole	-
Package / Case	TO-3P-3	TO-3P-3	-
Number of Channels	1 Channel	1 Channel	-
Transistor Polarity	N-Channel	N-Channel	-
Vds Drain Source Breakdown Voltage	500 V	600 V	-
Id Continuous Drain Current	26 A	26 A	-
Rds On Drain Source Resistance	230 mOhms	270 mOhms	-
Vgs Gate Source Voltage	30 V	30 V	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Pd Power Dissipation	400 W	460 W	-
Configuration	Single	Single	-
Channel Mode	Enhancement	Enhancement	-
Packaging	Tube	Tube	-
Height	20.3 mm	20.3 mm	-
Length	15.8 mm	15.8 mm	-
Series	IXTQ26N50	IXTQ26N60	-
Transistor Type	1 N-Channel	1 N-Channel	-
Width	4.9 mm	4.9 mm	-
Brand	IXYS	IXYS	-
Forward Transconductance Min	31 S	16 S	-
Fall Time	20 ns	21 ns	-
Product Type	MOSFET	MOSFET	-
Rise Time	25 ns	27 ns	-
Factory Pack Quantity	30	30	-
Subcategory	MOSFETs	MOSFETs	-
Typical Turn Off Delay Time	58 ns	75 ns	-
Typical Turn On Delay Time	20 ns	25 ns	-
Unit Weight	0.194007 oz	0.194007 oz	-
Vgs th Gate Source Threshold Voltage	-	5 V	-
Qg Gate Charge	-	72 nC	-
Tradename	-	PolarHV	-
Type	-	PolarHV Power MOSFET	-

Search Part Number : "IXTQ26N", Match & Start with "IXTQ26N" - Total : 5

製造商	型號	描述
Littelfuse	IXTQ26N50P	MOSFET 26.0 Amps 500 V 0.23 Ohm Rds
Littelfuse	IXTQ26N60P	MOSFET 26.0 Amps 600 V 0.27 Ohm Rds
	IXTQ26N50PS	全新原裝
	IXTQ26N60P	IGBT Transistors MOSFET 26.0 Amps 600 V 0.27 Ohm Rds
	IXTQ26N50P	IGBT Transistors MOSFET 26.0 Amps 500 V 0.23 Ohm Rds

IXTQ26N