IXTY1N8 stock, IXTY1N8, IXTY1N80P-TRL


PartNumber	IXTY1N80P-TRL	IXTY1N80P	IXTY1N80
Description	Discrete Semiconductor Modules Polar Power MOSFET	MOSFET POLAR MOSFET WITH REDUCED RDS 800V 1A	MOSFET 1 Amps 800 V 11 W Rds
Manufacturer	IXYS	IXYS	IXYS
Product Category	Discrete Semiconductor Modules	MOSFET	MOSFET
RoHS	Y	Y	Y
Product	Power MOSFET Modules	-	-
Type	Polar	-	-
Vgs Gate Source Voltage	30 V	-	20 V
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	TO-252-3	TO-252-3	TO-252-3
Minimum Operating Temperature	- 55 C	-	- 55 C
Maximum Operating Temperature	+ 150 C	-	+ 150 C
Packaging	Reel	Tube	Tube
Configuration	Single	Single	Single
Brand	IXYS	IXYS	IXYS
Transistor Polarity	N-Channel	N-Channel	N-Channel
Fall Time	42 ns	-	28 ns
Id Continuous Drain Current	1 A	1 A	1 A
Pd Power Dissipation	42 W	-	40 W
Product Type	Discrete Semiconductor Modules	MOSFET	MOSFET
Rds On Drain Source Resistance	14 Ohms	14 Ohms	11 Ohms
Rise Time	18 ns	-	19 ns
Factory Pack Quantity	2500	70	70
Subcategory	Discrete Semiconductor Modules	MOSFETs	MOSFETs
Tradename	Polar	-	-
Typical Turn Off Delay Time	58 ns	-	40 ns
Typical Turn On Delay Time	20 ns	-	11 ns
Vds Drain Source Breakdown Voltage	800 V	800 V	800 V
Vgs th Gate Source Threshold Voltage	2 V	-	-
Technology	-	Si	Si
Number of Channels	-	1 Channel	1 Channel
Series	-	IXTY1N80	IXTY1N80
Transistor Type	-	1 N-Channel	1 N-Channel
Unit Weight	-	0.012346 oz	0.012346 oz
Channel Mode	-	-	Enhancement
Height	-	-	2.38 mm
Length	-	-	6.73 mm
Width	-	-	6.22 mm

Search Part Number : "IXTY1N8", Match & Start with "IXTY1N8" - Total : 5

製造商	型號	描述
Littelfuse	IXTY1N80P-TRL	Discrete Semiconductor Modules Polar Power MOSFET
	IXTY1N80P	MOSFET POLAR MOSFET WITH REDUCED RDS 800V 1A
	IXTY1N80	MOSFET 1 Amps 800 V 11 W Rds
	IXTY1N80	MOSFET 1 Amps 800 V 11 W Rds
	IXTY1N80P	MOSFET POLAR MOSFET WITH REDUCED RDS 800V 1A

IXTY1N8