IXXH30N65

IXXH30N65C4D1 vs IXXH30N65B4D1 vs IXXH30N65B4

 
PartNumberIXXH30N65C4D1IXXH30N65B4D1IXXH30N65B4
DescriptionDiscrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-264(3)Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247ADIGBT Transistors 650V/65A Trench IGBT GenX4 XPT
ManufacturerIXYSIXYSIXYS
Product CategoryDiscrete Semiconductor ModulesDiscrete Semiconductor ModulesIGBT Transistors
RoHSYYY
ProductDiode Power ModulesDiode Power Modules-
TypeGenX4GenX4-
Vgs Gate Source Voltage20 V20 V-
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3TO-247AD-3
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
PackagingTubeTubeTube
ConfigurationSingleSingleSingle
BrandIXYSIXYSIXYS
Transistor PolarityN-ChannelN-Channel-
Fall Time28 ns50 ns-
Id Continuous Drain Current62 A70 A-
Pd Power Dissipation230 W230 W230 W
Product TypeDiscrete Semiconductor ModulesDiscrete Semiconductor ModulesIGBT Transistors
Rise Time72 ns65 ns-
Factory Pack Quantity253030
SubcategoryDiscrete Semiconductor ModulesDiscrete Semiconductor ModulesIGBTs
TradenameXPTXPTXPT
Typical Turn Off Delay Time140 ns150 ns-
Typical Turn On Delay Time20 ns20 ns-
Vds Drain Source Breakdown Voltage650 V650 V-
Vgs th Gate Source Threshold Voltage4 V4 V-
Technology--Si
Collector Emitter Voltage VCEO Max--650 V
Collector Emitter Saturation Voltage--1.66 V
Maximum Gate Emitter Voltage--20 V
Continuous Collector Current at 25 C--65 A
Series--IXXH30N65
Continuous Collector Current Ic Max--30 A
Gate Emitter Leakage Current--100 nA
Unit Weight--0.158733 oz
製造商 型號 描述 RFQ
Littelfuse
Littelfuse
IXXH30N65C4D1 Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-264(3)
IXXH30N65B4D1 Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD
IXXH30N65B4 IGBT Transistors 650V/65A Trench IGBT GenX4 XPT
IXXH30N65B4D1 IGBT
IXXH30N65C4D1 IGBT
IXXH30N65B4 IGBT Transistors 650V/65A Trench IGBT GenX4 XPT
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