 |  | | |
| PartNumber | JANTXV2N3498L | Jantxv2N3498/TR | Jantxv2N3498 |
| Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT Small-Signal BJT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | N | N | N |
| Packaging | Tray | - | Bulk |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | Transistors | Transistors | Transistors |
| Technology | - | Si | - |
| Mounting Style | - | Through Hole | - |
| Package / Case | - | TO-39-3 | - |
| Transistor Polarity | - | NPN | - |
| Configuration | - | Single | - |
| Collector Emitter Voltage VCEO Max | - | 100 V | - |
| Collector Base Voltage VCBO | - | 100 V | - |
| Emitter Base Voltage VEBO | - | 6 V | - |
| Collector Emitter Saturation Voltage | - | 0.6 V | - |
| Maximum DC Collector Current | - | 500 mA | - |
| Minimum Operating Temperature | - | - 65 C | - |
| Maximum Operating Temperature | - | + 200 C | - |
| DC Current Gain hFE Max | - | 120 at 150 mA, 10 V | - |
| DC Collector/Base Gain hfe Min | - | 15 at 500 mA, 10 V | - |
| Pd Power Dissipation | - | 1 W | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Microchip / Microsemi |
Jantxv2N3499 | Bipolar Transistors - BJT Small-Signal BJT | |
| JANTXV2N3498L | Bipolar Transistors - BJT Small-Signal BJT | ||
| Jantxv2N3498/TR | Bipolar Transistors - BJT | ||
| Jantxv2N3499/TR | Bipolar Transistors - BJT | ||
| Jantxv2N3499L | Bipolar Transistors - BJT Small-Signal BJT | ||
| Jantxv2N3499L/TR | Bipolar Transistors - BJT | ||
| Jantxv2N3498 | Bipolar Transistors - BJT Small-Signal BJT | ||
| JANTXV2N3498L/TR | Bipolar Transistors - BJT | ||
| JANTXV2N3499 | Trans GP BJT NPN 100V 0.5A 3-Pin TO-39 |