| PartNumber | KSB1116AGBU | KSB1116ALTA | KSB1116AGTA |
| Description | Bipolar Transistors - BJT PNP Epitaxial Sil | Bipolar Transistors - BJT PNP Epitaxial Transistor | Bipolar Transistors - BJT PNP Epitaxial Sil |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | T | Y |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-92-3 | TO-92-3 | TO-92-3 Kinked Lead |
| Transistor Polarity | PNP | PNP | PNP |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | - 60 V | - 60 V | - 60 V |
| Collector Base Voltage VCBO | - 80 V | - 80 V | - 80 V |
| Emitter Base Voltage VEBO | - 6 V | - 6 V | - 6 V |
| Collector Emitter Saturation Voltage | - 0.2 V | - 0.2 V | - 0.2 V |
| Maximum DC Collector Current | 1 A | 1 A | 1 A |
| Gain Bandwidth Product fT | 120 MHz | 120 MHz | 120 MHz |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | KSB1116A | - | KSB1116A |
| DC Current Gain hFE Max | 400 | 400 | 400 |
| Height | 5.33 mm | 5.33 mm | 4.7 mm |
| Length | 5.2 mm | 5.2 mm | 4.7 mm |
| Packaging | Bulk | Ammo Pack | Ammo Pack |
| Width | 4.19 mm | 4.19 mm | 3.93 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Continuous Collector Current | - 1 A | - 1 A | - 1 A |
| DC Collector/Base Gain hfe Min | 135 | 135 | 135 |
| Pd Power Dissipation | 750 mW | 750 mW | 750 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1000 | 2000 | 2000 |
| Subcategory | Transistors | Transistors | Transistors |
| Unit Weight | 0.006286 oz | 0.008466 oz | 0.008466 oz |
| Part # Aliases | - | - | KSB1116AGTA_NL |