| PartNumber | KSB1366GTU | KSB1366G |
| Description | Bipolar Transistors - BJT PNP Epitaxial Sil | Bipolar Transistors - BJT PNP Epitaxial Sil |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | E | E |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220F-3 | TO-220F-3 |
| Transistor Polarity | PNP | PNP |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | - 60 V | - 60 V |
| Collector Base Voltage VCBO | - 60 V | - 60 V |
| Emitter Base Voltage VEBO | - 7 V | - 7 V |
| Collector Emitter Saturation Voltage | - 0.5 V | - 0.5 V |
| Maximum DC Collector Current | 3 A | 3 A |
| Gain Bandwidth Product fT | 9 MHz | 9 MHz |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Series | KSB1366 | - |
| DC Current Gain hFE Max | 320 | 320 |
| Height | 9.19 mm | 9.19 mm |
| Length | 10.16 mm | 10.16 mm |
| Packaging | Tube | Bulk |
| Width | 4.7 mm | 4.7 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Continuous Collector Current | - 3 A | - 3 A |
| Pd Power Dissipation | 25 W | 2000 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1000 | 200 |
| Subcategory | Transistors | Transistors |
| Unit Weight | 0.080072 oz | 0.080072 oz |