KSB811

KSB811GTA vs KSB811OBU vs KSB811GBU

 
PartNumberKSB811GTAKSB811OBUKSB811GBU
DescriptionBipolar Transistors - BJT PNP Epitaxial TransistorBipolar Transistors - BJT PNP Epitaxial SilTRANS PNP 25V 1A TO-92S
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSTY-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-92-3TO-92-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 25 V- 25 V-
Collector Base Voltage VCBO- 30 V- 30 V-
Emitter Base Voltage VEBO- 5 V- 5 V-
Maximum DC Collector Current1 A1 A-
Gain Bandwidth Product fT110 MHz110 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
DC Current Gain hFE Max400400-
Height3.7 mm3.7 mm-
Length4 mm4 mm-
PackagingAmmo PackBulk-
Width2.31 mm2.31 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Continuous Collector Current- 1 A- 1 A-
DC Collector/Base Gain hfe Min7070-
Pd Power Dissipation350 mW350 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30001000-
SubcategoryTransistorsTransistors-
Unit Weight0.008466 oz0.008466 oz-
製造商 型號 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
KSB811GTA Bipolar Transistors - BJT PNP Epitaxial Transistor
KSB811OBU Bipolar Transistors - BJT PNP Epitaxial Sil
ON Semiconductor
ON Semiconductor
KSB811GBU TRANS PNP 25V 1A TO-92S
KSB811GTA TRANS PNP 25V 1A TO-92S
KSB811OBU TRANS PNP 25V 1A TO-92S
KSB811OTA TRANS PNP 25V 1A TO-92S
KSB811YBU TRANS PNP 25V 1A TO-92S
KSB811YTA TRANS PNP 25V 1A TO-92S
KSB811 全新原裝
KSB811-G 全新原裝
KSB811-GTA 全新原裝
KSB811-YC 全新原裝
KSB811CYTA 全新原裝
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