 | | | |
| PartNumber | KSB834 | KSB834-Y | KSB834-Y-HZ |
| Description | |||
| Manufacturer | FAI | - | - |
| Product Category | Transistors (BJT) - Single | - | - |
| Packaging | Reel | - | - |
| Unit Weight | 0.046296 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | TO-263 | - | - |
| Configuration | Single | - | - |
| Pd Power Dissipation | 30 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Collector Emitter Voltage VCEO Max | - 60 V | - | - |
| Transistor Polarity | PNP | - | - |
| Collector Emitter Saturation Voltage | - 0.5 V | - | - |
| Collector Base Voltage VCBO | - 60 V | - | - |
| Emitter Base Voltage VEBO | - 7 V | - | - |
| Maximum DC Collector Current | 3 A | - | - |
| Gain Bandwidth Product fT | 9 MHz | - | - |
| Continuous Collector Current | - 3 A | - | - |
| DC Collector Base Gain hfe Min | 60 | - | - |
| DC Current Gain hFE Max | 200 | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
KSB834WYTM | Bipolar Transistors - BJT PNP Epitaxial Sil | |
| KSB834O | Bipolar Transistors - BJT PNP Epitaxial Sil | ||
| KSB834Y | Bipolar Transistors - BJT PNP Epitaxial Sil | ||
| KSB834 | 全新原裝 | ||
| KSB834-Y | 全新原裝 | ||
| KSB834-Y-HZ | 全新原裝 | ||
| KSB834-Y-O | 全新原裝 | ||
| KSB834-YTU | 全新原裝 | ||
| KSB834/D880Y | 全新原裝 | ||
| KSB834TU | 全新原裝 | ||
| KSB834W | 全新原裝 | ||
| KSB834Y-TU | 全新原裝 | ||
| KSB834YTU + | 全新原裝 | ||
ON Semiconductor |
KSB834O | TRANS PNP 60V 3A TO-220 | |
| KSB834Y | TRANS PNP 60V 3A TO-220 | ||
| KSB834YTU | TRANS PNP 60V 3A TO-220 | ||
| KSB834WYTM | Bipolar Transistors - BJT PNP Epitaxial Sil |