 |  | | |
| PartNumber | KTC3198-O A1G | KTC3198-GR/P | KTC3198-O |
| Description | Bipolar Transistors - BJT NPN Transistor Hfe 70-140 | ||
| Manufacturer | Taiwan Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-92-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Collector Base Voltage VCBO | 60 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 0.25 V | - | - |
| Maximum DC Collector Current | 0.15 A | - | - |
| Gain Bandwidth Product fT | 80 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 140 | - | - |
| Packaging | Reel | - | - |
| Brand | Taiwan Semiconductor | - | - |
| Continuous Collector Current | 0.15 A | - | - |
| DC Collector/Base Gain hfe Min | 70 | - | - |
| Pd Power Dissipation | 500 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.007654 oz | - | - |
