MBC139

MBC13900NT1 vs MBC13900 vs MBC13900T1 , BGD804N

 
PartNumberMBC13900NT1MBC13900MBC13900T1 , BGD804N
DescriptionRF Bipolar Transistors DISCRETE BJT PB FREE
ManufacturerNXP--
Product CategoryRF Bipolar Transistors--
RoHSY--
TechnologySi--
Transistor PolarityNPN--
DC Collector/Base Gain hfe Min100 at 5 mA at 2 V--
Collector Emitter Voltage VCEO Max6.5 V--
Emitter Base Voltage VEBO3 V--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 85 C--
ConfigurationSingle--
Mounting StyleSMD/SMT--
Package / CaseSOT-343--
Collector Base Voltage VCBO8 V--
Height0.9 mm--
Length2 mm--
Width1.25 mm--
BrandNXP / Freescale--
Gain Bandwidth Product fT15000 MHz--
Maximum DC Collector Current0.02 A--
Product TypeRF Bipolar Transistors--
SubcategoryTransistors--
製造商 型號 描述 RFQ
NXP / Freescale
NXP / Freescale
MBC13916NT1 RF Amplifier CASCODE AMP REPL
MBC13900NT1 RF Bipolar Transistors DISCRETE BJT PB FREE
MBC13900 全新原裝
MBC13900T1 , BGD804N 全新原裝
MBC13916 全新原裝
MBC13916-900EVK MBC13916 RF Amplifier Chip Evaluation Board
MBC13916NT1G 全新原裝
MBC13916T 全新原裝
MBC13916T1 , MAX6736XKZH 全新原裝
MBC13916T1-916 全新原裝
MBC13916T1G 全新原裝
MBC13917EP 全新原裝
MBC13917EPR2. 全新原裝
NXP Semiconductors
NXP Semiconductors
MBC13900NT1 RF TRANS NPN 6.5V 15GHZ SOT343
MBC13900T1 RF TRANS NPN 6.5V 15GHZ SOT343
MBC13916T1 IC RF AMP 100MHZ-2.5GHZ SOT343R
MBC13917EPR2 IC AMP GP 100MHZ-2.5GHZ 6MLPD EP
MBC13916NT1 IC AMP GP 100MHZ-2.5GHZ SOT343R
Top