MBT3946DW1T1

MBT3946DW1T1G vs MBT3946DW1T1 , MAX6826RU vs MBT3946DW1T1(46)

 
PartNumberMBT3946DW1T1GMBT3946DW1T1 , MAX6826RUMBT3946DW1T1(46)
DescriptionBipolar Transistors - BJT 200mA 40V Dual Complementary
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSC-70-6--
Transistor PolarityNPN--
ConfigurationDual--
Collector Emitter Voltage VCEO Max40 V--
Collector Base Voltage VCBO40 V, 60 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage- 0.4 V, 0.3 V--
Maximum DC Collector Current0.2 A--
Gain Bandwidth Product fT250 MHz, 300 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMBT3946DW1T1--
Height0.9 mm--
Length2 mm--
PackagingReel--
Width1.25 mm--
BrandON Semiconductor--
Continuous Collector Current0.2 A--
DC Collector/Base Gain hfe Min40--
Pd Power Dissipation150 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # AliasesMBT3946DW1T2G--
Unit Weight0.000988 oz--
製造商 型號 描述 RFQ
MBT3946DW1T1G Bipolar Transistors - BJT 200mA 40V Dual Complementary
MBT3946DW1T1 , MAX6826RU 全新原裝
MBT3946DW1T1(46) 全新原裝
MBT3946DW1T1G , BL8555-1 全新原裝
MBT3946DW1T1G-CUT TAPE 全新原裝
ON Semiconductor
ON Semiconductor
MBT3946DW1T1 TRANS NPN/PNP 40V 0.2A SOT363
MBT3946DW1T1G Bipolar Transistors - BJT 200mA 40V Dual Complementary
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