 |  | | |
| PartNumber | MBT6429DW1T1G | MBT6429DW1T1 , BL8555-30 | MBT6429DW1T1-MAE |
| Description | Bipolar Transistors - BJT 200mA 55V NPN | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SC-70-6 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 45 V | - | - |
| Collector Base Voltage VCBO | 55 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 0.6 V | - | - |
| Maximum DC Collector Current | 0.2 A | - | - |
| Gain Bandwidth Product fT | 700 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | MBT6429DW1 | - | - |
| Height | 0.9 mm | - | - |
| Length | 2 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.25 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | 0.2 A | - | - |
| DC Collector/Base Gain hfe Min | 500 | - | - |
| Pd Power Dissipation | 150 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000988 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
| MBT6429DW1T1G | Bipolar Transistors - BJT 200mA 55V NPN | ||
| MBT6429DW1T1 , BL8555-30 | 全新原裝 | ||
| MBT6429DW1T1-MAE | 全新原裝 | ||
| MBT6429DWT1 | 全新原裝 | ||
| MBT6429DWT1G | 全新原裝 | ||
ON Semiconductor |
MBT6429DW1T1 | TRANS 2NPN 45V 0.2A SOT363 | |
| MBT6429DW1T1G | Bipolar Transistors - BJT 200mA 55V NPN |