MBT6429DW1

MBT6429DW1T1 vs MBT6429DW1T1 , BL8555-30 vs MBT6429DW1T1-MAE

 
PartNumberMBT6429DW1T1MBT6429DW1T1 , BL8555-30MBT6429DW1T1-MAE
DescriptionTRANS 2NPN 45V 0.2A SOT363
ManufacturerON Semiconductor--
Product CategoryTransistors (BJT) - Arrays--
Series---
PackagingTape & Reel (TR)--
Package Case6-TSSOP, SC-88, SOT-363--
Mounting TypeSurface Mount--
Supplier Device PackageSC-88/SC70-6/SOT-363--
Power Max150mW--
Transistor Type2 NPN (Dual)--
Current Collector Ic Max200mA--
Voltage Collector Emitter Breakdown Max45V--
DC Current Gain hFE Min Ic Vce500 @ 100μA, 5V--
Vce Saturation Max Ib Ic600mV @ 5mA, 100mA--
Current Collector Cutoff Max100nA--
Frequency Transition700MHz--
製造商 型號 描述 RFQ
MBT6429DW1T1G Bipolar Transistors - BJT 200mA 55V NPN
MBT6429DW1T1 , BL8555-30 全新原裝
MBT6429DW1T1-MAE 全新原裝
ON Semiconductor
ON Semiconductor
MBT6429DW1T1 TRANS 2NPN 45V 0.2A SOT363
MBT6429DW1T1G Bipolar Transistors - BJT 200mA 55V NPN
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