MCH338

MCH3383-TL-H vs MCH3382-TL-H vs MCH3382-TL-W

 
PartNumberMCH3383-TL-HMCH3382-TL-HMCH3382-TL-W
DescriptionMOSFET SWITCHING DEVICEMOSFET PCH 1.5V DRIVE SERIESMOSFET P-CH 12V 2A MCPH3
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSC-70FL-3SOT-323-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityP-ChannelP-ChannelP-Channel
Vds Drain Source Breakdown Voltage12 V12 V-
Id Continuous Drain Current3.5 A2 A-
Rds On Drain Source Resistance500 mOhms198 mOhms-
Vgs th Gate Source Threshold Voltage300 mV--
Vgs Gate Source Voltage900 mV--
Qg Gate Charge6.2 nC--
Minimum Operating Temperature- 5 C--
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation1 W800 mW-
ConfigurationSingleSingleSingle
Channel ModeEnhancement-Enhancement
PackagingReelReelReel
SeriesMCH3383MCH3382-
Transistor Type1 P-Channel1 P-Channel1 P-Channel
BrandON SemiconductorON Semiconductor-
Forward Transconductance Min5.3 S--
Fall Time65 ns-14 ns
Product TypeMOSFETMOSFET-
Rise Time49 ns-11 ns
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time109 ns-23 ns
Typical Turn On Delay Time9.9 ns-4.8 ns
Unit Weight0.000176 oz0.000176 oz-
Package Case--SC-70FL-3
Pd Power Dissipation--800 mW
Vgs Gate Source Voltage--+/- 9 V
Id Continuous Drain Current--- 2 A
Vds Drain Source Breakdown Voltage--- 12 V
Vgs th Gate Source Threshold Voltage--- 900 mV
Rds On Drain Source Resistance--1.04 Ohms
Qg Gate Charge--2.3 nC
製造商 型號 描述 RFQ
MCH3383-TL-W MOSFET PCH 0.9V DRIVE SERIES
MCH3383-TL-H MOSFET SWITCHING DEVICE
ON Semiconductor
ON Semiconductor
MCH3382-TL-H MOSFET PCH 1.5V DRIVE SERIES
MCH3383-TL-W MOSFET P-CH 12V 3.5A SC70FL
MCH3382-TL-W MOSFET P-CH 12V 2A MCPH3
MCH3383-TL-H MOSFET P-CH 12V 3.5A MCH3
MCH3382-TL-H IGBT Transistors MOSFET PCH 1.5V DRIVE SERIES
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