 |  | | |
| PartNumber | MCH6321-TL-E | MCH6320 | MCH6320-TL-EX |
| Description | MOSFET SWITCHING DEVICE | ||
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-363-6 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 4 A | - | - |
| Rds On Drain Source Resistance | 63 mOhms | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.5 W | - | - |
| Configuration | Single | Single | - |
| Packaging | Reel | Reel | - |
| Series | MCH6321 | MCH6320 | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Brand | ON Semiconductor | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.000265 oz | 0.000265 oz | - |
| Package Case | - | SOT-363-6 | - |
| Pd Power Dissipation | - | 1.5 W | - |
| Vgs Gate Source Voltage | - | 10 V | - |
| Id Continuous Drain Current | - | 3.5 A | - |
| Vds Drain Source Breakdown Voltage | - | - 12 V | - |
| Rds On Drain Source Resistance | - | 70 mOhms | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
| MCH6321-TL-E | MOSFET SWITCHING DEVICE | ||
| MCH6320 | 全新原裝 | ||
| MCH6320-TL-EX | 全新原裝 | ||
| MCH6321-TL-EX | 全新原裝 | ||
ON Semiconductor |
MCH6320-TL-E | MOSFET PCH 1.8V DRIVE SERIES | |
| MCH6321-TL-W | MOSFET PCH 4A 20V 1.8V DRIVE M | ||
| MCH6320-TL-E | MOSFET P-CH 12V 3.5A MCPH6 | ||
| MCH6320-TL-W | MOSFET P-CH 12V 3.5A MCPH6 | ||
| MCH6321-TL-E | MOSFET P-CH 20V 4A MCPH6 | ||
| MCH6321-TL-W | IGBT Transistors MOSFET PCH 4A 20V 1.8V DRIVE MCP |