PartNumber | MCH6601-TL-E | MCH6603-TL-H | MCH6602-TL-E |
Description | MOSFET PCH+PCH 2.5V DRIVE SERIES | MOSFET PCH+PCH 1.5V DRIVE SERIES | MOSFET POWER MOSFET |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-363-6 | SOT-363-6 | SOT-363-6 |
Number of Channels | 2 Channel | 2 Channel | 2 Channel |
Transistor Polarity | P-Channel | P-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | 50 V | 30 V |
Id Continuous Drain Current | 200 mA | 140 mA | 350 mA |
Rds On Drain Source Resistance | 10.4 Ohms | 23 mOhms | 3.7 Ohms |
Vgs Gate Source Voltage | 10 V | - | 10 V |
Qg Gate Charge | 1.43 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 800 mW | 800 mW | 800 mW |
Configuration | Dual | Dual | Dual |
Packaging | Reel | Reel | Reel |
Series | MCH6601 | MCH6603 | MCH6602 |
Transistor Type | 2 P-Channel | 2 P-Channel | 2 N-Channel |
Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Fall Time | 130 nS | - | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 55 nS | - | - |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 120 nS | - | - |
Typical Turn On Delay Time | 24 nS | - | - |
Unit Weight | 0.000265 oz | 0.000265 oz | 0.000265 oz |