MJ11015G

MJ11015G vs MJ11015G,MJ11015 vs MJ11015G,MJ11016G

 
PartNumberMJ11015GMJ11015G,MJ11015MJ11015G,MJ11016G
DescriptionDarlington Transistors 30A 120V Bipolar Power PNP
ManufacturerON Semiconductor--
Product CategoryDarlington Transistors--
RoHSY--
ConfigurationSingle--
Transistor PolarityPNP--
Collector Emitter Voltage VCEO Max120 V--
Emitter Base Voltage VEBO5 V--
Collector Base Voltage VCBO120 V--
Maximum DC Collector Current30 A--
Pd Power Dissipation200 W--
Mounting StyleThrough Hole--
Package / CaseTO-204-2 (TO-3)--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMJ11015--
PackagingTray--
Height8.51 mm--
Length39.37 mm--
Width26.67 mm--
BrandON Semiconductor--
Continuous Collector Current30 A--
DC Collector/Base Gain hfe Min1000--
Product TypeDarlington Transistors--
Factory Pack Quantity100--
SubcategoryTransistors--
Unit Weight0.415986 oz--
製造商 型號 描述 RFQ
MJ11015G Darlington Transistors 30A 120V Bipolar Power PNP
MJ11015G,MJ11015 全新原裝
MJ11015G,MJ11016G 全新原裝
MJ11015G,MJ11016G,MJ2955 全新原裝
ON Semiconductor
ON Semiconductor
MJ11015G Darlington Transistors 30A 120V Bipolar Power PNP
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