MJ4502

MJ4502G vs MJ4502 vs MJ4502-ST

 
PartNumberMJ4502GMJ4502MJ4502-ST
DescriptionBipolar Transistors - BJT 30A 100V 200W PNPBIPOLAR TRANSISTOR, PNP, -90V, Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:-90V, Transition Frequency ft:2MHz, Power Dissipation Pd:200W, DC Collector Current:-30A, DC Current Ga
ManufacturerON SemiconductorID-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-204-2--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max90 V--
Collector Base Voltage VCBO100 V--
Emitter Base Voltage VEBO4 V--
Collector Emitter Saturation Voltage0.8 V--
Maximum DC Collector Current30 A--
Gain Bandwidth Product fT2 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesMJ4502--
Height8.51 mm--
Length39.37 mm--
PackagingTray--
Width26.67 mm--
BrandON Semiconductor--
Continuous Collector Current30 A--
DC Collector/Base Gain hfe Min25--
Pd Power Dissipation200 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity100--
SubcategoryTransistors--
製造商 型號 描述 RFQ
MJ4502G Bipolar Transistors - BJT 30A 100V 200W PNP
MJ4502 BIPOLAR TRANSISTOR, PNP, -90V, Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:-90V, Transition Frequency ft:2MHz, Power Dissipation Pd:200W, DC Collector Current:-30A, DC Current Ga
MJ4502-ST 全新原裝
MJ4502MEX 全新原裝
ON Semiconductor
ON Semiconductor
MJ4502G Bipolar Transistors - BJT 30A 100V 200W PNP
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