 |  | | |
| PartNumber | MJ802G | MJ802512 | MJ802A-Y190-400 |
| Description | Bipolar Transistors - BJT 30A 90V 200W NPN | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-204-2 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 90 V | - | - |
| Collector Base Voltage VCBO | 100 V | - | - |
| Emitter Base Voltage VEBO | 4 V | - | - |
| Collector Emitter Saturation Voltage | 0.8 V | - | - |
| Maximum DC Collector Current | 30 A | - | - |
| Gain Bandwidth Product fT | 2 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | MJ802 | - | - |
| Height | 8.51 mm | - | - |
| Length | 39.37 mm | - | - |
| Packaging | Tray | - | - |
| Width | 26.67 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | 30 A | - | - |
| DC Collector/Base Gain hfe Min | 25 | - | - |
| Pd Power Dissipation | 200 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 100 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.423288 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
| MJ802G | Bipolar Transistors - BJT 30A 90V 200W NPN | ||
| MJ802512 | 全新原裝 | ||
| MJ802A-Y190-400 | 全新原裝 | ||
| MJ802G(ON) | 全新原裝 | ||
| MJ802G,MJ802 | 全新原裝 | ||
STMicroelectronics |
MJ802 | TRANS NPN 90V 30A TO-3 | |
ON Semiconductor |
MJ802G | Bipolar Transistors - BJT 30A 90V 200W NPN |