MJB45H11T

MJB45H11T4G vs MJB45H11T4 vs MJB45H11TG

 
PartNumberMJB45H11T4GMJB45H11T4MJB45H11TG
DescriptionBipolar Transistors - BJT 8A 80V 50W PNP
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3--
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max80 V--
Collector Base Voltage VCBO5 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage1 V1 V-
Maximum DC Collector Current10 A10 A-
Gain Bandwidth Product fT40 MHz40 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMJB45H11MJB45H11-
Height4.83 mm--
Length10.29 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width9.65 mm--
BrandON Semiconductor--
Continuous Collector Current10 A10 A-
DC Collector/Base Gain hfe Min60--
Pd Power Dissipation50 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity800--
SubcategoryTransistors--
Unit Weight0.050054 oz--
Package Case-TO-263-3, D2Pak (2 Leads + Tab), TO-263AB-
Mounting Type-Surface Mount-
Supplier Device Package-D2PAK-
Power Max-2W-
Transistor Type-PNP-
Current Collector Ic Max-10A-
Voltage Collector Emitter Breakdown Max-80V-
DC Current Gain hFE Min Ic Vce-40 @ 4A, 1V-
Vce Saturation Max Ib Ic-1V @ 400mA, 8A-
Current Collector Cutoff Max-10μA-
Frequency Transition-40MHz-
Pd Power Dissipation-50 W-
Collector Emitter Voltage VCEO Max-80 V-
Collector Base Voltage VCBO-5 V-
Emitter Base Voltage VEBO-5 V-
DC Collector Base Gain hfe Min-60-
製造商 型號 描述 RFQ
MJB45H11T4G Bipolar Transistors - BJT 8A 80V 50W PNP
MJB45H11T4 全新原裝
MJB45H11TG 全新原裝
ON Semiconductor
ON Semiconductor
MJB45H11T4G Bipolar Transistors - BJT 8A 80V 50W PNP
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