MJD41CT

MJD41CT4G vs MJD41CT100Q/R vs MJD41CT1G

 
PartNumberMJD41CT4GMJD41CT100Q/RMJD41CT1G
DescriptionBipolar Transistors - BJT 6A 100V 20W NPN
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseDPAK-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max100 V--
Collector Base Voltage VCBO100 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage1.5 V--
Maximum DC Collector Current6 A--
Gain Bandwidth Product fT3 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesMJD41C--
Height2.38 mm--
Length6.73 mm--
PackagingReel--
Width6.22 mm--
BrandON Semiconductor--
Continuous Collector Current6 A--
DC Collector/Base Gain hfe Min30--
Pd Power Dissipation20 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.009185 oz--
製造商 型號 描述 RFQ
MJD41CT4G Bipolar Transistors - BJT 6A 100V 20W NPN
MJD41CT100Q/R 全新原裝
MJD41CT1G 全新原裝
MJD41CT4G ON J41CG 全新原裝
MJD41CT4G/MJD42C 全新原裝
MJD41CT4G/MJD42CT4G 全新原裝
MJD41CTG 全新原裝
MJD41CT4G J41CG 全新原裝
MJD41CT4G-CUT TAPE 全新原裝
MJD41CTF-CUT TAPE 全新原裝
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
MJD41CTF Bipolar Transistors - BJT NPN Epitaxial Sil
ON Semiconductor
ON Semiconductor
MJD41CT4 Bipolar Transistors - BJT 6A 100V 20W NPN
MJD41CT4 TRANS NPN 100V 6A DPAK
MJD41CTF TRANS NPN 100V 6A DPAK
MJD41CT4G Bipolar Transistors - BJT 6A 100V 20W NPN
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