MJE18004

MJE18004 vs MJE18004-D2 vs MJE18004D

 
PartNumberMJE18004MJE18004-D2MJE18004D
DescriptionBipolar Transistors - BJT 5A 1000V 75W NPN
ManufacturerON SemiconductorONON
Product CategoryBipolar Transistors - BJTTransistors (BJT) - SingleTransistors (BJT) - Single
RoHSN--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max450 V--
Collector Base Voltage VCBO1 kV--
Emitter Base Voltage VEBO9 V--
Collector Emitter Saturation Voltage0.92 V--
Maximum DC Collector Current5 A--
Gain Bandwidth Product fT13 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Height9.28 mm (Max)--
Length10.28 mm (Max)--
PackagingTube--
Width4.82 mm (Max)--
BrandON Semiconductor--
Continuous Collector Current5 A--
Pd Power Dissipation75 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity50--
SubcategoryTransistors--
Unit Weight0.211644 oz--
製造商 型號 描述 RFQ
MJE18004G Bipolar Transistors - BJT 5A 1000V 75W NPN
MJE18004-D2 全新原裝
MJE18004D 全新原裝
ON Semiconductor
ON Semiconductor
MJE18004D2G Bipolar Transistors - BJT 5A 1000V 75W NPN
MJE18004 Bipolar Transistors - BJT 5A 1000V 75W NPN
MJE18004 TRANS NPN 450V 5A TO220AB
MJE18004D2 TRANS NPN 450V 5A TO-220AB
MJE18004D2G TRANS NPN 450V 5A TO-220AB
MJE18004G Bipolar Transistors - BJT 5A 1000V 75W NPN
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