MJF29

MJF2955G vs MJF2955 vs MJF2955G.

 
PartNumberMJF2955GMJF2955MJF2955G.
DescriptionBipolar Transistors - BJT 10A 90V 30W PNPTRANS PNP 90V 10A TO-220FP
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220FP-3--
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max90 V--
Collector Base Voltage VCBO90 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage1 V1 V-
Maximum DC Collector Current10 A10 A-
Gain Bandwidth Product fT2 MHz2 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMJF2955MJF2955-
Height9.24 mm--
Length10.63 mm--
PackagingTubeTube-
Width4.9 mm--
BrandON Semiconductor--
Continuous Collector Current10 A10 A-
DC Collector/Base Gain hfe Min20--
Pd Power Dissipation30 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity50--
SubcategoryTransistors--
Unit Weight0.081130 oz0.081130 oz-
Package Case-TO-220-3 Full Pack-
Mounting Type-Through Hole-
Supplier Device Package-TO-220FP-
Power Max-2W-
Transistor Type-PNP-
Current Collector Ic Max-10A-
Voltage Collector Emitter Breakdown Max-90V-
DC Current Gain hFE Min Ic Vce-20 @ 4A, 4V-
Vce Saturation Max Ib Ic-2.5V @ 3.3A, 10A-
Current Collector Cutoff Max-1μA-
Frequency Transition-2MHz-
Pd Power Dissipation-30 W-
Collector Emitter Voltage VCEO Max-90 V-
Collector Base Voltage VCBO-90 V-
Emitter Base Voltage VEBO-5 V-
DC Collector Base Gain hfe Min-20-
製造商 型號 描述 RFQ
MJF2955G Bipolar Transistors - BJT 10A 90V 30W PNP
MJF2955G. 全新原裝
MJF2955T 全新原裝
ON Semiconductor
ON Semiconductor
MJF2955 TRANS PNP 90V 10A TO-220FP
MJF2955G TRANS PNP 90V 10A TO-220FP
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