MJF4

MJF44H11G vs MJF44H11G. vs MJF44H11G/MJF45H11G

 
PartNumberMJF44H11GMJF44H11G.MJF44H11G/MJF45H11G
DescriptionBipolar Transistors - BJT 10A 80V 50W NPNBIP T0220FP NPN 10A 60V ROHS COMPLIANT: YES
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-220FP-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max80 V--
Collector Base Voltage VCBO5 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage1 V--
Maximum DC Collector Current10 A--
Gain Bandwidth Product fT50 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMJF44H11--
Height9.24 mm--
Length10.63 mm--
PackagingTube--
Width4.9 mm--
BrandON Semiconductor--
Continuous Collector Current10 A--
DC Collector/Base Gain hfe Min60--
Pd Power Dissipation36 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity50--
SubcategoryTransistors--
Unit Weight0.081130 oz--
製造商 型號 描述 RFQ
MJF44H11G Bipolar Transistors - BJT 10A 80V 50W NPN
MJF45H11G Bipolar Transistors - BJT 10A 80V 50W PNP
MJF47G Bipolar Transistors - BJT 1A 250V 28W NPN
MJF44H11G. BIP T0220FP NPN 10A 60V ROHS COMPLIANT: YES
MJF44H11G/MJF45H11G 全新原裝
MJF45H11G. Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:-80V, Transition Frequency ft:40MHz, Power Dissipation Pd:36W, DC Collector Current:-10A, DC Current Gain hFE:40hFE, No. of Pins:3Pins
MJF45H11G/MJF44H11G 全新原裝
ON Semiconductor
ON Semiconductor
MJF47 Bipolar Transistors - BJT 1A 250V 28W NPN
MJF44H11 TRANS NPN 80V 10A TO220FP
MJF45H11 TRANS PNP 80V 10A TO-220FP
MJF47 TRANS NPN 250V 1A TO220FP
MJF44H11G Bipolar Transistors - BJT 10A 80V 50W NPN
MJF47G Bipolar Transistors - BJT 1A 250V 28W NPN
MJF45H11G Bipolar Transistors - BJT 10A 80V 50W PNP
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