MMBT2907ALT1G

MMBT2907ALT1G vs MMBT2907ALT1GOSDKR-ND vs MMBT2907ALT1G-CUT TAPE

 
PartNumberMMBT2907ALT1GMMBT2907ALT1GOSDKR-NDMMBT2907ALT1G-CUT TAPE
DescriptionBipolar Transistors - BJT 600mA 60V PNP
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 60 V--
Collector Base Voltage VCBO- 60 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage- 1.6 V--
Maximum DC Collector Current0.6 A--
Gain Bandwidth Product fT200 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMMBT2907AL--
Height0.94 mm--
Length2.9 mm--
PackagingReel--
Width1.3 mm--
BrandON Semiconductor--
Continuous Collector Current- 0.6 A--
DC Collector/Base Gain hfe Min75--
Pd Power Dissipation225 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz--
製造商 型號 描述 RFQ
MMBT2907ALT1G Bipolar Transistors - BJT 600mA 60V PNP
MMBT2907ALT1GOSDKR-ND 全新原裝
MMBT2907ALT1G-CUT TAPE 全新原裝
ON Semiconductor
ON Semiconductor
MMBT2907ALT1G Bipolar Transistors - BJT 600mA 60V PNP
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