MMBT3904LT1G

MMBT3904LT1G vs MMBT3904LT1G 1AM vs MMBT3904LT1G(1A)

 
PartNumberMMBT3904LT1GMMBT3904LT1G 1AMMMBT3904LT1G(1A)
DescriptionBipolar Transistors - BJT NPN GENERAL PURPOSE
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max40 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage0.3 V--
Maximum DC Collector Current0.2 A--
Gain Bandwidth Product fT300 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMMBT3904L--
Height0.94 mm--
Length2.9 mm--
PackagingReel--
Width1.3 mm--
BrandON Semiconductor--
Continuous Collector Current0.2 A--
Pd Power Dissipation225 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.049384 oz--
製造商 型號 描述 RFQ
MMBT3904LT1G Bipolar Transistors - BJT NPN GENERAL PURPOSE
MMBT3904LT1GMMBT3906LT1G 全新原裝
MMBT3904LT1GMMBT3904 全新原裝
MMBT3904LT1G 1AM 全新原裝
MMBT3904LT1G(1A) 全新原裝
MMBT3904LT1G/BKN 全新原裝
MMBT3904LT1G-CUT TAPE 全新原裝
ON Semiconductor
ON Semiconductor
MMBT3904LT1G Bipolar Transistors - BJT NPN GENERAL PURPOSE
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